spst non-reflective algaas pin diode switch v4 MA4AGSW1A advanced: data sheets contain information regarding a product m/a-com technology solutions is considering for development. performance is based on target specifications, simulated results, and/or prototype measurements. commitment to develop is not guaranteed. preliminary: data sheets contain information regarding a product m/a-com technology solutions has under development. performance is based on engineering tests. specifications are typical. mechanical outline has been fixed. engineering samples and/or test data may be available. commitment to produce in volume is not guaranteed. 1 ? north america tel: 800.366.2266 ? europe tel: +353.21.244.6400 ? india tel: +91.80.43537383 ? china tel: +86.21.2407.1588 visit www.macomtech.com for addi tional data sheets and product information. m/a-com technology solutions inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. features ? ultra broad bandwidth: 50 mhz to 50 ghz ? functional bandwidth : 50 mhz to 70 ghz ? 0.5 db insertion loss at 50ghz ? 46 db isolation at 50 ghz ? low current consumption. ? -10ma /1.35v for low loss state ? +10ma /1.35v for isolation state ? silicon nitride passivation ? polymer scratch protection ? rohs compliant description m/a-com?s, MA4AGSW1A is an aluminum-gallium- arsenide, single pole, single throw (spst), absorptive pin diode switch. the switch features enhanced algaas anodes which are formed using m/a-com?s patented hetero-junction technology. algaas technology produces a switch with less loss than a device fabricated using conventional gaas processes. as much as a 0.3db reduction in insertion loss can be realized at 50ghz. this device is fabricated on an omcvd epitaxial wafer using a process designed for high device uniformity and extremely low parasitics. the pin diodes within the chip exhibit low series resistance, low capacitance, and fast switching speed. they are fully passivated with silicon nitride and have an additional polymer layer for scratch protection. the protective coating prevents damage during handling and assembly to the diode junction as well as the anode air-bridges . off chip bias circuitry will be required. applications the output port of this device, j2, is terminated into 50 ? during isolation mode, which allows this signal to be absorbed rather than reflected back. this functionality makes it ideal for instrumentation and radar applications. an absorptive switch can be added to other algaas reflective switches to improve isolation vswr and increase isolation magnitude. the ultra low capacitance of the pin diodes makes it ideal for usage in low loss and high isolation microwave and millimeter wave switch designs through 70 ghz. the lower series resistance of the algaas diodes reduces the total insertion loss and distortion of the device. algaas pin switches are used in applications such as switching arrays for radar systems, radiometers, and other multi-function components. maximum combined operating conditions for rf power, d.c. bias, and temperature: +23 dbm c.w. @ 10 ma (per diode) @ +85c. yellow areas indicate bond pads parameter maximum rating operating temperature -55c to +125c storage temperature -55c to +150c incident c.w. rf power +23dbm c.w. breakdown voltage 25v bias current 25ma assembly temperature +300c < 10 sec junction temperature +175c absolute maximum ratings @ t amb = +25c
spst non-reflective algaas pin diode switch v4 MA4AGSW1A advanced: data sheets contain information regarding a product m/a-com technology solutions is considering for development. performance is based on target specifications, simulated results, and/or prototype measurements. commitment to develop is not guaranteed. preliminary: data sheets contain information regarding a product m/a-com technology solutions has under development. performance is based on engineering tests. specifications are typical. mechanical outline has been fixed. engineering samples and/or test data may be available. commitment to produce in volume is not guaranteed. 2 ? north america tel: 800.366.2266 ? europe tel: +353.21.244.6400 ? india tel: +91.80.43537383 ? china tel: +86.21.2407.1588 visit www.macomtech.com for addi tional data sheets and product information. m/a-com technology solutions inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. electrical specifications @ t amb = 25c (on-wafer measurements) parameter ports bias conditions frequency typical insertion loss j1 - j2 bias j1 ? -1.35v/10ma 50ghz 1.2db bias b ? -1.35v/0ma isolation j1 - j2 port j1 ? +1.35v/10ma 50ghz 30db bias b ? +1.35v/10ma input return loss j1- j2 (terminated by 50 ? ) port j1 ? -1.35v/10ma 50ghz 15db bias b ? -1.35v/0ma output return loss (insertion loss)) j2- j1 (terminated by 50 ? ) port j1 ? -1.35v/10ma 50ghz 18db bias b ? -1.35v/0ma output return loss (isolation) j2 port j1 ? +1.35v/10ma 50ghz 18db bias b ? +1.35v/10ma switching speed (10% - 90% rf voltage) j1 - j2 5v pin ttl driver 10ghz 10ns 1mhz repetition frequency. notes: 1. typical switching speed is measured from 10% to 90% of the detected rf voltage driven by a ttl compatible driver. driver output parallel rc network uses a capacitor between 390 pf - 560 pf and a resistor between 150 - 220 ohms to achieve 10 ns rise and fall times. 2. bias nodes, j1 and b may be connected together
spst non-reflective algaas pin diode switch v4 MA4AGSW1A advanced: data sheets contain information regarding a product m/a-com technology solutions is considering for development. performance is based on target specifications, simulated results, and/or prototype measurements. commitment to develop is not guaranteed. preliminary: data sheets contain information regarding a product m/a-com technology solutions has under development. performance is based on engineering tests. specifications are typical. mechanical outline has been fixed. engineering samples and/or test data may be available. commitment to produce in volume is not guaranteed. 3 ? north america tel: 800.366.2266 ? europe tel: +353.21.244.6400 ? india tel: +91.80.43537383 ? china tel: +86.21.2407.1588 visit www.macomtech.com for addi tional data sheets and product information. m/a-com technology solutions inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. typical rf performance (probed on wafer) freq. (ghz) loss (db) input return loss freq. (ghz) isol (db) isolation
spst non-reflective algaas pin diode switch v4 MA4AGSW1A advanced: data sheets contain information regarding a product m/a-com technology solutions is considering for development. performance is based on target specifications, simulated results, and/or prototype measurements. commitment to develop is not guaranteed. preliminary: data sheets contain information regarding a product m/a-com technology solutions has under development. performance is based on engineering tests. specifications are typical. mechanical outline has been fixed. engineering samples and/or test data may be available. commitment to produce in volume is not guaranteed. 4 ? north america tel: 800.366.2266 ? europe tel: +353.21.244.6400 ? india tel: +91.80.43537383 ? china tel: +86.21.2407.1588 visit www.macomtech.com for addi tional data sheets and product information. m/a-com technology solutions inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. typical rf performance (probed on wafer) freq. (ghz) loss (db) output return loss (insertion loss state) freq. (ghz) loss (db) output return loss (isolation loss state)
spst non-reflective algaas pin diode switch v4 MA4AGSW1A advanced: data sheets contain information regarding a product m/a-com technology solutions is considering for development. performance is based on target specifications, simulated results, and/or prototype measurements. commitment to develop is not guaranteed. preliminary: data sheets contain information regarding a product m/a-com technology solutions has under development. performance is based on engineering tests. specifications are typical. mechanical outline has been fixed. engineering samples and/or test data may be available. commitment to produce in volume is not guaranteed. 5 ? north america tel: 800.366.2266 ? europe tel: +353.21.244.6400 ? india tel: +91.80.43537383 ? china tel: +86.21.2407.1588 visit www.macomtech.com for addi tional data sheets and product information. m/a-com technology solutions inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. MA4AGSW1A schematic with bias network for 10-30ghz operation of the MA4AGSW1A switch an external bias network and d.c return is required for successful operation of the MA4AGSW1A absorptive spst algaas pin diode switch. the backs ide area of the die is the rf and d.c. ground return plane. in the low loss state, the series diode is forward biased with negative current at d.c. bias 1 and the match diode is biased at 0v at d.c. bias b. in the isolated state, the shunt diode and the match diode are both forward biased at d.c. bias b1 and d.c. bias b (series diode becomes reverse biased ). this isolation state bias results in a good 50 ? match into port j2. typical driver connections ar e shown in table i below. the bias network design shown in the schematic should yield > 30db rf to dc isolation. typical driver connections j1-j2 low loss : good vswr at j1 & j2 d.c. bias 1 = -10ma d.c. bias 1 = +10ma d.c. bias b = 0v d.c. bias b = +10ma j1-j2 isolation : good vswr at j2 notes: 1. d.c. bias 1 and d.c. bias b nodes can be connected together. 2. diode junction forward bias voltage, ? vf @ 10 ma ~ 1.35 v @ + 25 c. 10 pf dc bias 4.7 nh 10 pf MA4AGSW1A chip b1 dc and rf ground return on backside of chip matching diode bias MA4AGSW1A chip 10 pf
spst non-reflective algaas pin diode switch v4 MA4AGSW1A advanced: data sheets contain information regarding a product m/a-com technology solutions is considering for development. performance is based on target specifications, simulated results, and/or prototype measurements. commitment to develop is not guaranteed. preliminary: data sheets contain information regarding a product m/a-com technology solutions has under development. performance is based on engineering tests. specifications are typical. mechanical outline has been fixed. engineering samples and/or test data may be available. commitment to produce in volume is not guaranteed. 6 ? north america tel: 800.366.2266 ? europe tel: +353.21.244.6400 ? india tel: +91.80.43537383 ? china tel: +86.21.2407.1588 visit www.macomtech.com for addi tional data sheets and product information. m/a-com technology solutions inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. chip dimensions and bonding pad locations (in yellow) dimension mils mm min max min max a 44.9 46.9 1.14 1.19 b 36.9 38.9 0.94 0.99 c 10.4 11.4 0.26 0.29 d 22.8 23.4 0.58 0.59 e 17.3 17.9 0.44 0.45 f 20.3 20.9 0.52 0.53 g 37.9 38.5 0.96 0.98 h 3.4 4.4 0.09 0.11 thickness 3.5 4.5 0.09 0.11
spst non-reflective algaas pin diode switch v4 MA4AGSW1A advanced: data sheets contain information regarding a product m/a-com technology solutions is considering for development. performance is based on target specifications, simulated results, and/or prototype measurements. commitment to develop is not guaranteed. preliminary: data sheets contain information regarding a product m/a-com technology solutions has under development. performance is based on engineering tests. specifications are typical. mechanical outline has been fixed. engineering samples and/or test data may be available. commitment to produce in volume is not guaranteed. 7 ? north america tel: 800.366.2266 ? europe tel: +353.21.244.6400 ? india tel: +91.80.43537383 ? china tel: +86.21.2407.1588 visit www.macomtech.com for addi tional data sheets and product information. m/a-com technology solutions inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. ordering information part number package MA4AGSW1A waffle pack assembly instructions cleanliness these chips should be handled in a clean environment. static sensitivity these devices are considered esd class 1a, hbm. proper esd techniques should be used when handling these devices. general handling the protective polymer coating on the active areas of the di e provides scratch and impact protection, particularly for the metal air bridge, which contacts the diode?s anode. die should primarily be handled with vacuum pickup tools, or alter natively with plastic tweezers. assembly techniques the MA4AGSW1A, algaas device is designed to be mounted with electrically conductive silver epoxy or with a low temperature solder perform, which does not have a rich tin content. solder die attach only solders which do not scavenge gol d, such as 80au/sn20, or indalloy #2 is recommended. do not expose die to temperatures greater than 300c for more than 10 seconds. electrical conducti ve epoxy die attach use a controlled thickness of ap proximately 2 mils for best electrical condu ctivity and lowest thermal resistance. cure epoxy per manufacturer ?s schedule. typically 150c for 1 hour. ribbon/wire bonding thermo-compression wedge or ball bonding may be used to attach ribbons or wire to the gold bonding pads. a 1/4 x 3 mil gold ribbon is recommended on all rf ports and should be kept as short as possible for the lowest inductance and best microwave performance. for more detailed handling and assembly instructions, see application note m541 , ?bonding and handling procedures for chip diode devices? at www.macomtech.com .
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